工作职责：

1. Responsible for the development of GaN RF devices;
2. Responsible for the key processes and advanced processes according to customer and product requirements;
3. Responsible for GaN RF device simulation, electrical performance testing and analysis;
4. Responsible for reliability test and failure analysis ;
5. Technical discussion with external suppliers to explore the resources needed for new projects.

任职资格：

1. Master degree or above, major in Electronic Engineering, Microelectronics, Semiconductor, Materials Physicsor related;
2. More than 5 years research experience in GaN RF;
3. Have systematic theoretical knowledge of GaN RF, and simulation design methods;
4. Familiar with semiconductor process flow;
5. Good team spirit and communication skills.